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| Semiconductor SUR510EF Epitaxial Planar Type NPN Silicon Transistor Description Features * Digital transistor * Two SRC1204 chips in SOT-563F package * With built-in bias resistors Ordering Information Type NO. SUR510EF Marking 9X Package Code SOT-563F Outline Dimensions unit : mm 3 R1 R2 2 1 R2 Tr2 R1 Tr1 4 5 6 R1 Tr1 Tr2 47K 47K R2 47K 47K PIN Connections 1. Emitter 1 2. Emitter 2 3. Base 2 4. Collector 2 5. Base 1 6. Collector 1 KST-J007-000 1 SUR510EF Absolute maximum ratings [Tr1,Tr2 : NPN] Characteristic Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature (Ta=25 C) Symbol VO VI IO PD TJ TSTG Ratings 50 40 100 100 150 -55 ~ 150 Unit V V mA mW C C Electrical Characteristics [Tr1,Tr2 : NPN] Characteristic Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current (Ta=25 C) Symbol IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * Test Condition VO=50V, VI=0 VO=5V, IO=10mA IO=10mA, II=0.5mA VO=0.2V, IO=5mA VO=5V, IO=0.1mA VO=10V, IO=5mA VI=5V Min. 80 1.0 - Typ. 200 0.1 2.8 1.2 200 - Max. 500 0.3 5.0 0.18 Unit nA V V V MHz mA II * : Characteristic of Transistor Only KST-J007-000 2 SUR510EF Electrical Characteristic Curves [Tr1, Tr2 : NPN] Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KST-J007-000 3 |
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